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參數(shù)資料
| 型號： | BU4506DZ |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 57K |
| 代理商： | BU4506DZ |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506DZ
Fig.7. Typical collector-emitter saturation voltage.
Fig.8. Typical base-emitter saturation voltage.
Fig.9. Typical collector storage and fall time.
I
C
=3 A; T
j
= 85C; f = 16kHz
Fig.10. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
Fig.11. Transient thermal impedance.
BU4506DF/X/Z
0.1
1
10
0
0.2
0.4
0.6
0.8
1
IC / A
VCESAT / V
IC/IB = 5
Ths = 25 C
Ths = 85 C
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
IB / A
VBESAT / V
IC = 3 A
Ths = 25 C
Ths = 85 C
BU4506DF/X/Z
0.001
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00 1E+01
t / s
Zth (K/W)
0.5
0.2
0.1
0.05
0.02
D = 0
tp
D = tp/T
T
P
t
D
BU4506DZ
0
0.5
1
1.5
2
0
2
4
6
8
10
IB / A
ts/tf/ us
ICsat = 3 A
Ths = 85 C
Freq = 16 kHz
BU4506D ts/tf
January 1999
4
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4507 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU4507AZ | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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