- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375402 > BU4506DZ (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BU4506DZ |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 57K |
| 代理商： | BU4506DZ |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506DZ
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope with integrated damper diode intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
3.0
1.55
300
MAX.
1500
800
5
8
32
3
-
1.9
400
UNIT
V
V
A
A
W
V
A
V
ns
T
hs
≤
25 C
I
= 3.0 A; I
B
= 0.75 A
f = 16 kHz
I
F
= 3.0 A
I
Csat
= 3.0 A;f = 16 kHz
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
5
8
3
5
4
32
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
55
MAX.
3.9
-
UNIT
K/W
K/W
1 2 3
case
b
c
e
Rbe
1
Turn-off current.
January 1999
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU4506 | Silicon Diffused Power Transistor |
| BU4506AF | Silicon Diffused Power Transistor |
| BU4506AX | Silicon Diffused Power Transistor |
| BU4507 | Silicon Diffused Power Transistor |
| BU4507AF | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4507 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU4507AZ | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4507DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。