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參數(shù)資料
| 型號： | BTS112-A |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？N溝道TEMPFET？ |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 442K |
| 代理商： | BTS112-A |
TEMPFET
BTS 115 A
2
04.97
Electrical Characteristics
at
T
j
= 25
°
C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
= 0
, I
D
= 0.25 mA
Gate threshold voltage
V
GS
=
V
DS
, I
D
= 1.0 mA
Zero gate voltage drain current
V
GS
= 0 V,
V
DS
= 50 V
V
(BR)DSS
50
–
–
V
V
GS(th)
1.5
2.0
2.5
T
j
= 25
°
C
T
j
= 125
°
C
I
DSS
–
–
0.1
10
1.0
100
μ
A
Gate-source leakage current
V
GS
= 20 V,
V
DS
= 0
T
j
= 25
°
C
T
j
= 150
°
C
I
GSS
–
–
10
2
100
4
nA
μ
A
Drain-source on-state resistance
V
GS
= 4.5 V
, I
D
= 7.8 A
R
DS(on)
–
0.09
0.12
Dynamic Characteristics
Forward transconductance
V
DS
≥
2
×
I
D
×
R
DS(on)max
,
I
D
=7.8 A
Input capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Output capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
V
GS
= 0
, V
DS
= 25 V,
f
= 1 MHz
Turn-on time
t
on
, (
t
on
=
t
d(on)
+
t
r
)
V
CC
= 30 V,
V
GS
= 5 V,
I
D
= 3 A,
R
GS
= 50
g
fs
5.5
9.5
–
S
C
iss
–
550
735
pF
C
oss
–
220
320
C
rss
–
85
150
t
d(on)
t
r
t
d(off)
t
f
–
15
25
ns
–
70
100
Turn-off time
t
off
, (
t
off
=
t
d(off)
+
t
f
)
V
CC
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
GS
= 50
–
70
90
–
50
70
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS112A E3045A | 功能描述:MOSFET N-Channel 60V TEMPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BTS112AE3045A | 制造商:Infineon Technologies AG 功能描述: |
| BTS112AE3045ANTMA1 | 功能描述:MOSFET TEMPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BTS112ANK | 制造商:Infineon Technologies 功能描述:Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) TO-220AB |
| BTS112ANKSA1 | 功能描述:MOSFET TEMPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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