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參數(shù)資料
| 型號： | BTA212X-800F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Three quadrant triacs guaranteed commutation(三象限雙向確保換向可控硅) |
| 中文描述： | 800 V, 12 A, TRIAC |
| 封裝： | PLASTIC, SOT-186A, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BTA212X-800F |
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
Fig.1. Maximum on-state dissipation, P
, versus rms
on-state current, I
T(RMS)
, where
α
= conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width t
p
, for
sinusoidal currents, t
p
≤
20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus heatsink temperature T
hs
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
hs
≤
56C.
Fig.6. Normalised gate trigger voltage
V
GT
(T
j
)/ V
GT
(25C), versus junction temperature T
j
.
0
5
10
15
0
5
10
15
20
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Ths(max) / C
125
105
85
65
45
1
-50
0
50
Ths / C
100
150
0
5
10
15
BT138X
56 C
IT(RMS) / A
10us
100us
1ms
T / s
10ms
100ms
10
100
1000
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
dI /dt limit
0.01
0.1
1
10
0
5
10
15
20
25
surge duration / s
IT(RMS) / A
1
10
Number of cycles at 50Hz
100
1000
0
20
40
60
80
100
ITSM / A
T
ITSM
time
I
Tj initial = 25 C max
T
-50
0
50
100
150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
February 2000
4
Rev 1.000
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