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參數(shù)資料
| 型號(hào)： | BTA212X-800F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Three quadrant triacs guaranteed commutation(三象限雙向確保換向可控硅) |
| 中文描述： | 800 V, 12 A, TRIAC |
| 封裝： | PLASTIC, SOT-186A, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 49K |
| 代理商： | BTA212X-800F |
Philips Semiconductors
Product specification
Three quadrant triacs
guaranteed commutation
BTA212X series D, E and F
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance
junction to heatsink
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN.
TYP.
MAX.
UNIT
-
-
-
-
-
4.0
5.5
-
K/W
K/W
K/W
R
th j-a
Thermal resistance
junction to ambient
55
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
...D
MAX.
...E
UNIT
BTA212X-
...D
...F
I
GT
Gate trigger current
2
V
= 12 V; I
T
= 0.1 A
T2+ G+
T2+ G-
T2- G-
V
= 12 V; I
GT
= 0.1 A
T2+ G+
T2+ G-
T2- G-
-
-
-
1.0
2.2
3.3
5
5
5
10
10
10
25
25
25
mA
mA
mA
I
L
Latching current
-
-
-
6
6
9
15
25
25
25
30
30
30
40
40
mA
mA
mA
I
H
Holding current
V
D
= 12 V; I
GT
= 0.1 A
-
3.8
15
25
30
mA
...D, E, F
V
T
V
GT
On-state voltage
Gate trigger voltage
I
T
= 17 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= 400 V; I
T
= 0.1 A;
T
j
= 125 C
V
D
= V
;
T
j
= 125 C
-
-
1.3
0.7
0.4
1.6
1.5
-
V
V
V
0.25
I
D
Off-state leakage current
-
0.1
0.5
mA
2
Device does not trigger in the T2-, G+ quadrant.
February 2000
2
Rev 1.000
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