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參數(shù)資料
| 型號： | BLW85 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 7/15頁 |
| 文件大小： | 109K |
| 代理商： | BLW85 |
March 1993
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully
metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu
straps are used for a direct contact between upper and lower sheets.
To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed.
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
handbook, full pagewidth
MGP605
1888MJK
1888MJK
C1
C2
R1
C3a
C4
C5
R2
C7
C8
C3b
C6b
C6a
L8
L3
L2
L1
L5
L7
L6
+
VCC
rivet
72
150
L4
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| BLW86 | HF/VHF power transistor |
| BLW87 | VHF power transistor |
| BLW898 | UHF linear power transistor |
| BLW90 | UHF power transistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLW86 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW87 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW89 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLW898 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF linear power transistor |
| BLW90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
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