參數(shù)資料
型號(hào): BLW85
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: HF/VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁(yè)數(shù): 10/15頁(yè)
文件大?。?/td> 109K
代理商: BLW85
March 1993
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
R.F. performance in s.s.b. class-AB operation
V
CE
= 12,5 V; T
h
up to 25
°
C; R
th mb-h
0,3 K/W
f
1
= 28,000 MHz; f
2
= 28,001 Mhz
Note
1.
Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
OUTPUT POWER
W
G
p
dB
η
dt
%
d
3
dB
(1)
typ.
33
d
5
dB
(1)
typ.
36
I
C(ZS)
mA
3 to 30 (P.E.P.)
typ. 19,5
typ. 35
25
Fig.15 Test circuit; s.s.b. class-AB.
handbook, full pagewidth
MGP623
R3
R4
R5
R1
L2
C4
C3
L3
C12
C13
C14
C6
C5
L1
C2
C1
C7
L4
T.U.T.
C8
C10
C11
C9
R2
L5
+
VB = 12.5 V
R6
TR2
bias
TR1
C16
C15
RL =
50
+
VB = 12.5 V
RS =
50
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