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參數(shù)資料
| 型號(hào)： | BLW81 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-122A, 4 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大小： | 62K |
| 代理商： | BLW81 |
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLW81
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); T
h
= 25
°
C
List of components:
f (MHz)
V
CE
(V)
12,5
13,5
12,5
P
L
(W)
10
10
10
P
S
(W)
<
typ 1,9
typ 0,45
G
P
(dB)
>
6,0
typ 7,2
typ 13,5
I
C
(A)
<
1,33
η
(%)
>
typ 75
typ 60
z
i
(
)
1,3
+
j2,5
1,2
j0,6
Y
L
(mS)
150
j66
140
j80
470
470
175
2,5
60
C1 = 2,2 pF (
±
0, 25 pF) ceramic capacitor
C2 = C9 = C10 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003)
C3 = 3,9 pF (
±
0,25 pF) ceramic capacitor
C4 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001)
C5 = C6 = 15 pF ceramic chip capacitor (cat. no. 2222 851 13159)
C7 = 100 pF ceramic feed-through capacitor
C8 = 100 nF polyester capacitor
L1 = stripline (27,9 mm
×
6,0 mm)
L2 = 13 turns closely wound enamelled Cu wire (0,5 mm); int. dia. = 4 mm; leads 2
×
5 mm
L3 = 17 nH; 1
1
2
turns enamelled Cu wire (1 mm); spacing 1 mm; int. dia. = 6 mm; leads 2
×
5 mm
L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L5 = stripline (45,8 mm
×
6,0 mm)
L1 and L5 are striplines on a double Cu-clad printed circuit board with PTFE fibre-glass dielectric
(
ε
r
= 2,74); thickness 1/16".
R1 = 1
(
±
5%) carbon resistor
R2 = 10
(
±
5%) carbon resistor
Component layout and printed-circuit board for 470 MHz test circuit (Fig.8).
Fig.7 Class-B test circuit at f = 470 MHz.
handbook, full pagewidth
MGP578
50
50
C4
C5
C3
L2
R1
C2
C1
C9
C10
L5
+
VCC
L1
T.U.T.
C6
C7
C8
R2
L3
L4
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BLW83 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:HF/VHF power transistor |
| BLW85 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW86 | 功能描述:射頻雙極電源晶體管 RF Transistor RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發(fā)射極最大電壓 VCEO:25 V 發(fā)射極 - 基極電壓 VEBO:4 V 集電極連續(xù)電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| BLW87 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW89 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
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