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參數(shù)資料
| 型號： | BLV862 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 89K |
| 代理商： | BLV862 |
1999 Jun 25
3
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV862
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Thermal resistance is determined under specified RF operating conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
65
30
3
25
350
+150
200
V
V
V
A
W
°
C
°
C
T
mb
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
P
tot
= 350 W; note 1
note 1
0.5
0.15
K/W
K/W
Fig.2 DC SOAR.
Total device; both sections equally loaded.
(1) T
mb
= 25
°
C.
(2) T
h
= 70
°
C.
handbook, halfpage
2
10
1
MBK231
1
10
10
2
VCE (V)
IC
(A)
(1)
(2)
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short time operation during mismatch.
Fig.3 Power derating curves.
handbook, halfpage
Ptot
(W)
0
40
80
160
300
100
0
200
MGD528
120
Th (
°
C)
(2)
(1)
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