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參數(shù)資料
| 型號： | BLV862 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BLV862 |
1999 Jun 25
2
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV862
FEATURES
Double stage internal input and output matching
networks for an optimum wideband capability and
high gain
Polysilicon emitter ballasting resistors for an optimum
temperature profile
Gold metallization ensures excellent reliability.
APPLICATIONS
Common emitter class-AB operation in output stages in
bands 4 and 5 (470 to 860 MHz) television transmitter
amplifiers (vision or sound).
DESCRIPTION
NPN silicon planar epitaxial transistor with two sections in
push-pull configuration. The device is encapsulated in a
SOT262B 4-lead rectangular flange package, with two
ceramic caps.
PINNING
Notes
1.
2.
Collectors 1 and 2 are connected together internally.
Common emitters are connected to the flange.
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
c1
c2
b1
b2
e
collector 1; note 1
collector 2; note 1
base 1
base 2
common emitter; note 2
Fig.1 Simplified outline (SOT262B) and symbol.
handbook, halfpage
MAM031
c1
b1
b2
c2
e
1
2
3
4
Top view
5
5
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter push-pull test circuit.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
≥
8
typ. 9
η
C
(%)
≥
45
typ. 52
G
p
(dB)
CW class-AB
860
28
150
≤
1
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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