參數(shù)資料
型號: BD935F
廠商: NXP Semiconductors N.V.
英文描述: SILICON EPITAXIAL BASE POWER TRANSISTORS
中文描述: 硅外延基功率晶體管
文件頁數(shù): 6/6頁
文件大?。?/td> 289K
代理商: BD935F
相關(guān)PDF資料
PDF描述
BUK638-500B PowerMOS transistor Fast recovery diode FET
BYV42EB Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Color:Light Blue; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes
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