型號: | BUK638-500B |
廠商: | NXP SEMICONDUCTORS |
元件分類: | JFETs |
英文描述: | PowerMOS transistor Fast recovery diode FET |
中文描述: | 12.5 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
文件頁數(shù): | 1/5頁 |
文件大?。?/td> | 188K |
代理商: | BUK638-500B |
相關(guān)PDF資料 |
PDF描述 |
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BYV42EB | Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Color:Light Blue; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
BD941 | SILICON EPITAXIAL BASE POWER TRANSISTORS |
BD937 | SILICON EPITAXIAL BASE POWER TRANSISTORS |
BD937F | SILICON EPITAXIAL BASE POWER TRANSISTORS |
BD939 | ECONOLINE: RJ & RG - Dual Output from a Single Input Rail - 3kVDC & 4kVDC Isolation - Optional Continuous Short Circuit Protected - Custom Solutions Available - UL94V-0 Package Material - Efficiency to 84% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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BUK638-800 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Fast recovery diode FET |
BUK638-800A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Fast recovery diode FET |
BUK638-800B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Fast recovery diode FET |
BUK6507-55C | 制造商:NXP Semiconductors 功能描述:Tube 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V72ASOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,72A,SOT78 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,72A,SOT78; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 100A 3-Pin(3+Tab) TO-220AB |
BUK6507-55C,127 | 功能描述:MOSFET N-CHAN 55V 100A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |