型號(hào): | BD935 |
廠商: | NXP Semiconductors N.V. |
英文描述: | SILICON EPITAXIAL BASE POWER TRANSISTORS |
中文描述: | 硅外延基功率晶體管 |
文件頁數(shù): | 2/7頁 |
文件大小: | 331K |
代理商: | BD935 |
相關(guān)PDF資料 |
PDF描述 |
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BD935F | SILICON EPITAXIAL BASE POWER TRANSISTORS |
BUK638-500B | PowerMOS transistor Fast recovery diode FET |
BYV42EB | Hook-Up Wire; Conductor Size AWG:18; No. Strands x Strand Size:19 x 30; Jacket Color:Light Blue; Approval Bodies:UL; Approval Categories:UL AWM Style 1371; Passes VW-1 Flame Test; Cable/Wire MIL SPEC:MIL-W-16878/4 Type E RoHS Compliant: Yes |
BD941 | SILICON EPITAXIAL BASE POWER TRANSISTORS |
BD937 | SILICON EPITAXIAL BASE POWER TRANSISTORS |
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參數(shù)描述 |
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