參數(shù)資料
型號: BCY89
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: NPN SILICON PLANAR DUAL TRANSISTORS
中文描述: 30 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-71
封裝: TO-71, 6 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 52K
代理商: BCY89
1997 Jun 20
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BCY87; BCY88; BCY89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
45
40
5
30
150
+150
175
V
V
V
mA
mW
°
C
°
C
T
amb
25
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
1
K/mW
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
I
CBO
collector cut-off current
BCY87
BCY88
collector cut-off current
BCY89
DC current gain
BCY87
BCY88
BCY89
DC current gain
collector capacitance
transition frequency
I
E
= 0; V
CB
= 20 V; T
amb
= 90
°
C
5
20
nA
nA
I
CBO
I
E
= 0; V
CB
= 20 V
10
nA
h
FE
V
CE
= 10 V
I
C
= 5
μ
A
I
C
= 500
μ
A
I
C
= 10 mA
I
C
= 50
μ
A; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
E
=
50
μ
A; V
CE
= 10 V;
f = 100 MHz
I
E
=
500
μ
A; V
CE
= 10 V;
f = 100 MHz
I
C
= 200
μ
A; V
CE
= 5 V;
R
S
= 2 k
; f = 10 Hz to 15.7 kHz
I
C
= 200
μ
A; V
CE
= 5 V;
R
S
= 2 k
; f = 1 kHz; B = 200 Hz
80
120
100
100
10
600
600
450
3.5
h
FE
C
c
f
T
pF
MHz
50
MHz
F
noise figure
4
dB
F
noise figure
BCY87
BCY88; BCY89
4
5
dB
dB
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