參數(shù)資料
型號: BD130
英文描述: TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 15A I(C) | TO-3
中文描述: 晶體管|晶體管|叩| 60V的五(巴西)總裁|第15A一(c)|至3
文件頁數(shù): 1/3頁
文件大?。?/td> 139K
代理商: BD130
COMSET SEMICONDUCTORS
1/3
BD130
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
V
CEO
Collector-Emitter Voltage
60
V
V
CBO
Collector-Base Voltage
100
V
V
CEX
Collector-Emitter Voltage
V
BE
=-1.5 V
100
V
I
C
Collector Current
15
A
I
B
Base Current
7
A
P
T
Power Dissipation
@ T
C
= 45°
100
Watts
T
J
Junction Temperature
T
S
Storage Temperature
-55 to +200
°C
The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO-
3 metal case. It is intended for power switching circuits, series and
shunt regulators, output stages and high fidelity amplifiers.
NPN SILICON TRANSISTOR
POWER LINERAR AND SWITCHING APPLICATIONS
相關(guān)PDF資料
PDF描述
BD167 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:6V; Capacitance:100pF; Holding Current:50mA
BD168 Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:6V; Capacitance:100pF; Holding Current:50mA
BD170 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BD130_12 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON TRANSISTOR HOMOBASE
BD13003B 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Encapsulated Transistor
BD-130R 制造商:SK Kohki 功能描述:
BD131 制造商:. 功能描述:
BD131/BD132 制造商:STMicroelectronics 功能描述:NPN power transistor pair,BD131/BD132 3A