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參數(shù)資料
| 型號： | BCX19CSM4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
| 中文描述： | 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC3-4 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 42K |
| 代理商： | BCX19CSM4 |
2001 Fairchild Semiconductor Corporation
Rev. A, Octorber 2001
B
Absolute Maximum Ratings
T
C
=25
°
C
unless otherwise noted
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector current
T
J
, T
stg
Junction and Storage Temperature
Electrical Characteristics
T
C
=25
°
C unless otherwise noted
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
CBO
Collector Cutoff Current
Thermal Characteristics
T
A
=25
°
C unless otherwise noted
Symbol
P
D
Total Device Dissipation
Derate above 25
°
C
R
θ
JA
Thermal Resistance, Junction to Ambient
Parameter
Value
45
50
5.0
500
-55 ~ +150
Units
V
V
V
mW
°
C
- Continuous
Test Condition
Min.
Typ.
Max.
Units
I
C
= 10mA, I
B
= 0
I
C
= 10
μ
A, I
C
= 0
V
CB
= 20V, I
E
= 0
V
CB
= 20V, I
E
= 0, T
A
= 150
°
C
V
EB
= 5.0V, I
C
= 0
45
50
V
V
nA
μ
A
μ
A
100
5.0
10
I
EBO
ON CHARACTERISTICS
h
FE
Emitter Cutoff Current
DC Current Gain
I
C
= 100mA, V
CE
= 1.0V
I
C
= 300mA, V
CE
= 1.0V
I
C
= 500mA, V
CE
= 1.0V
I
C
= 500mA, I
B
= 50mA
I
C
= 500mA, V
CE
= 1.0V
100
70
40
600
V
CE(sat)
V
BE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.62
1.2
V
V
Parameter
Max.
300
2.4
417
Units
mW
mW/
°
C
°
C/W
BCX19
NPN Medium Power Transistor
This device is designed for general purpose amplifiers.
Sourced from process 38.
SOT-23
Marking: U1
1. Base 2. Emitter 3. Collector
1
2
3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BCX19L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 500MA I(C) | SOT-23 |
| BCX19LT1 | 功能描述:兩極晶體管 - BJT 500mA 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX19LT1G | 功能描述:兩極晶體管 - BJT 500mA 50V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCX19-MR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR BCX19 MINIREEL 500PCS |
| BCX19R | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
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