參數(shù)資料
型號(hào)： BCX6825
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 16K
代理商： BCX6825
SOT89 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – FEBRUARY 1995
FEATURES
*
High gain and low saturation voltages
%
COMPLEMENTARY TYPE –
BCX69
PARTMARKING DETAIL –
BCX68
BCX68-16 – CC
BCX68-25 – CD
– CE
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
25
V
Collector-Emitter Voltage
20
V
Emitter-Base Voltage
5
V
Peak Pulse Current
2
A
Continuous Collector Current
1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
1
W
-65 to +150
°C
TYP.
MAX . UNIT
CONDITIONS.
I
C
=100
μ
A
Collector-Base
Breakdown voltage
V
(BR)CBO
25
V
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
20
V
I
C
=10mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
V
I
E
=100
μ
A
Collector Cut-Off
Current
I
CBO
0.1
10
μ
A
μ
A
μ
A
V
CB
=25V
V
CB
=25V, T
a
=150°C
V
EB
=5V
I
C
=1A, I
B
=100mA*
Emitter Cut-Off Current
I
EBO
V
CE(sat)
10
Collector-Emitter
Saturation Voltage
0.5
V
Base-Emitter Turn-On
Voltage
V
BE(on)
1.0
V
I
C
=1A, V
CE
=1V*
Static Forward Current
Transfer Ratio
h
FE
BCX 68-16
BCX 68-25
50
85
60
100
160
250
375
250
400
I
C
=5mA, V
=10V
I
C
=500mA, V
=1V
I
C
=1A, V
=1V*
I
C
=500mA, V
CE
=1V*
I
C
=500mA, V
CE
=1V
I
=100mA, V
CE
=5V,
f=100MHz
Transition Frequency
f
T
100
MHz
Output Capacitance
C
obo
25
pF
V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
For typical characteristics graphs see FMMT449 datasheet.
BCX68
C
C
B
E
SOT89
3 - 36
相關(guān)PDF資料
PDF描述
BCX68 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
BCX68-16 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
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BCX6916
BCX6925
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