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參數(shù)資料
| 型號： | BCW61D |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP general purpose transistors |
| 中文描述： | PNP通用型晶體管 |
| 封裝： | BCW61B<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BCW61C<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 120K |
| 代理商： | BCW61D |
1999 Apr 12
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BCW61 series
THERMAL CHARACTERISTICS
Note
1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ
≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
20
20
20
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
32 V
I
E
= 0; V
CB
=
32 V; T
amb
= 150
°
C
I
C
= 0; V
EB
=
4 V
I
C
=
10
μ
A; V
CE
=
5 V
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
BCW61B
BCW61C
BCW61D
DC current gain
BCW61B
BCW61C
BCW61D
DC current gain
BCW61B
BCW61C
BCW61D
collector-emitter saturation voltage I
C
=
10 mA; I
B
=
0.25 mA
30
40
100
I
C
=
2 mA; V
CE
=
5 V
180
250
380
310
460
630
I
C
=
50 mA; V
CE
=
1 V
80
100
110
60
120
600
0.68
600
100
650
550
720
4.5
11
250
550
850
1.05
750
V
CEsat
mV
mV
mV
V
mV
mV
mV
pF
pF
MHz
I
C
=
50 mA; I
B
=
1.25 mA
I
C
=
10 mA; I
B
=
0.25 mA
I
C
=
50 mA; I
B
=
1.25 mA
I
C
=
2 mA; V
CE
=
I
C
=
10
μ
A; V
CE
=
5 V
I
C
=
50 mA; V
CE
=
1 V
I
E
= i
e
= 0; V
CB
=
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
0.5 V; f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V;
f = 100 MHz; note 1
I
C
=
200
μ
A; V
CE
=
5 V; R
S
= 2 k
Ω
;
f = 1 kHz; B = 200 Hz
V
BEsat
base-emitter saturation voltage
V
BE
base-emitter voltage
C
c
C
e
f
T
collector capacitance
emitter capacitance
transition frequency
F
noise figure
2
6
dB
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參數(shù)描述 |
|---|---|
| BCW61D T/R | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCW61D,215 | 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BCW61D/E8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 100MA I(C) | SOT-23 |
| BCW61D/E9 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 100MA I(C) | SOT-23 |
| BCW61D/T1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR SOT-23 |
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