參數(shù)資料
型號： BCP51-6
文件頁數(shù)： 1/1頁
文件大?。?/td> 42K
代理商： BCP51-6
SOT223 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 AUGUST 1995
%
FEATURES
*
Suitable for AF drivers and output stages
*
High collector current and Low V
CE(sat)
COMPLEMENTARY TYPE
BCP54
PARTMARKING DETAILS
BCP51
BCP51 10
BCP51 16
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-45
V
Collector-Emitter Voltage
-45
V
Emitter-Base Voltage
-5
V
Peak Pulse Current
-1.5
A
Continuous Collector Current
-1
A
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
2
W
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-45
V
I
C
=-100
μ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-45
V
I
C
=- 10mA *
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5
V
I
E
=-10
μ
A
Collector Cut-Off
Current
I
CBO
-100
-10
nA
μ
A
V
CB
=-30V
V
CB
=-30V, T
amb
=150°C
Emitter Cut-Off Current I
EBO
-10
μ
A
V
EB
=-5V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.5
V
I
C
=-500mA, I
B
=-50mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
-1.0
V
I
C
=-500mA, V
CE
=-2V*
Static Forward Current
Transfer Ratio
h
FE
BCP51-10
BCP51-16
40
25
63
100
100
160
250
160
250
I
C
=-150mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
I
C
=-150mA, V
CE
=-2V*
Transition Frequency
f
T
125
MHz
I
=-50mA, V
CE
=-10V,
f=100MHz
*Measured under pulsed conditions. Pulse width=300
μ
s. Duty cycle
≤
2%
BCP51
C
C
E
B
3 - 13
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BCP51-BCP53 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistors (For AF driver and output stages High collector current)
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