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參數(shù)資料
| 型號(hào)： | BC857S |
| 廠商： | DIOTEC SEMICONDUCTOR AG |
| 元件分類： | 通用總線功能 |
| 英文描述： | High Speed CMOS Logic 8-Stage Synchronous Down Counters 16-SOIC -55 to 125 |
| 中文描述： | 表面貼裝硅外延PlanarTransistors |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 73K |
| 代理商： | BC857S |
1
) Tested with pulses t
= 300
:
s, duty cycle
#
2% – Gemessen mit Impulsen t
p
= 300
:
s, Schaltverhltnis
#
2%
2
) Mounted on P.C. board with 3 mm
2
copper pad at each terminal
Montage auf Leiterplatte mit 3 mm
2
Kupferbelag (Ltpad) an jedem Anschlu
19
1
2
3
4
6
5
T1
T2
General Purpose Transistors
BC856S ... BC858S
Characteristics (T
j
= 25
/
C)
Kennwerte (T
j
= 25
/
C)
Typ.
Min.
Max.
Collector saturation volt. – Kollektor-Sttigungsspag.
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base saturation voltage – Basis-Sttigungsspannung
1
)
- I
C
= 10 mA, - I
B
= 0.5 mA
- I
C
= 100 mA, - I
B
= 5 mA
Base-Emitter voltage – Basis-Emitter-Spannung
1
)
- V
CE
= 5 V, - I
C
= 2 mA
- V
CE
= 5 V, - I
C
= 10 mA
Collector-Base cutoff current – Kollektorreststrom
I
E
= 0, - V
CB
= 30 V
I
E
= 0, - V
CB
= 30 V, T
j
= 150
/
C
Emitter-Base cutoff current – Emitterreststrom
I
C
= 0, - V
EB
= 5 V
Gain-Bandwidth Product – Transitfrequenz
- V
CE
= 5 V, - I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazitt
- V
CB
= 10 V, I
E
= i
e
= 0, f = 1 MHz
Noise figure – Rauschzahl
- V
CE
= 5 V, - I
C
= 200
:
A
R
G
= 2 k
S
, f = 1 kHz,
)
f = 200 Hz
Thermal resistance junction to ambient air
Wrmewiderstand Sperrschicht – umgebende Luft
-V
CEsat
-V
CEsat
–
–
90 mV
200 mV
250 mV
600 mV
- V
BEsat
- V
BEsat
–
–
700 mV
900 mV
–
–
- V
BEon
- V
BEon
600 mV
–
650 mV
–
750 mV
820 mV
- I
CB0
- I
CB0
–
–
–
–
15 nA
5
:
A
- I
EB0
–
–
100 nA
f
T
100 MHz
–
–
C
CB0
–
–
6 pF
F
–
2 dB
10 dB
R
thA
420 K/W
2
)
Recommended complementary NPN transistors
Empfohlene komplementre NPN-Transistoren
BC846S ... BC848S
Pinning – Anschlubelegung
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