參數(shù)資料
型號： BC807
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： 45 V, 500 mA PNP general-purpose transistors
中文描述： 45伏，500毫安PNP型通用晶體管
封裝： BC807<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BC807-16<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,
文件頁數(shù)： 5/19頁
文件大?。?/td> 233K
代理商： BC807
BC807_BC807W_BC327_6
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 19
NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
7.
Characteristics
[1]
Pulse test: t
p
≤
300
μ
s;
δ
≤
0.02.
V
BE
decreases by approximately 2 mV/K with increasing temperature.
[2]
Table 8.
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
I
CBO
collector-base cut-off current
Characteristics
Conditions
I
E
= 0 A; V
CB
=
20 V
I
E
= 0 A; V
CB
=
20 V;
T
j
= 150
°
C
I
C
= 0 A; V
EB
=
5 V
I
C
=
100 mA; V
CE
=
1 V
Min
-
-
Typ
-
-
Max
100
5
Unit
nA
μ
A
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC807; BC807W; BC327
BC807-16; BC807-16W;
BC327-16
BC807-25; BC807-25W;
BC327-25
BC807-40; BC807-40W;
BC327-40
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
-
-
100
nA
[1]
100
100
-
-
600
250
160
-
400
250
-
600
h
FE
V
CEsat
I
C
=
500 mA; V
CE
=
1 V
I
C
=
500 mA; I
B
=
50 mA
[1]
40
-
-
-
700
[1]
-
mV
V
BE
C
c
I
C
=
500 mA; V
CE
=
1 V
I
E
= i
e
= 0 A; V
CB
=
10 V;
f = 1 MHz
I
C
=
10 mA; V
CE
=
5 V;
f = 100 MHz
[2]
-
-
5
1.2
-
V
pF
-
f
T
transition frequency
80
-
-
MHz
相關PDF資料
PDF描述
BC808-40W Surface mount Si-Epitaxial PlanarTransistors
BC807-16W SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -20 to 85 C; Package: PTQP0100KA-A
BC807-25W Surface mount Si-Epitaxial PlanarTransistors
BC807-40W Surface mount Si-Epitaxial PlanarTransistors
BC807W Surface mount Si-Epitaxial PlanarTransistors
相關代理商/技術參數(shù)
參數(shù)描述
BC807 T/R 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC807,215 功能描述:兩極晶體管 - BJT TRANS GP TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
BC807 制造商:NXP Semiconductors 功能描述:TRANSISTOR PNP SOT-23
BC807 制造商:NXP Semiconductors 功能描述:TRANSISTOR ((NW))
BC807.16 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 500MA I(C) | TO-226AA
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