參數(shù)資料
型號(hào)： BAS16-V-GS18
廠(chǎng)商： VISHAY SEMICONDUCTORS
元件分類(lèi)： 參考電壓二極管
英文描述： Diode Small Signal Switching 75V 0.15A 3-Pin SOT-23 T/R
中文描述： Diodes (General Purpose, Power, Switching) 75 Volt 0.15 Amp 2.0A IFSM @ 1uS
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 79K
代理商： BAS16-V-GS18
BAS16
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 15-May-13
For technical questions within your region:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
1
Document Number: 85539
Small Signal Fast Switching Diode
MECHANICAL DATA
Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes/options:
18/10K per 13
"
reel (8 mm tape), 10K/box
08/3K per 7
"
reel (8 mm tape), 15K/box
FEATURES
Silicon epitaxial planar diode
Ultra fast switching speed
Surface mount package ideally suited for
automatic insertion
High conductance
AEC-Q101 qualified
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
Material categorization: For definitions of compliance
please see
www.vishay.com/doc99912
1
2
3
PARTS TABLE
PART
ORDERING CODE
BAS16-E3-08 or BAS16-E3-18
BAS16-HE3-08 or BAS16-HE3-18
INTERNAL CONSTRUCTION
TYPE MARKING
REMARKS
BAS16
Single diode
B6
Tape and reel
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
= working peak reverse voltage
= DC blocking voltage
TEST CONDITION
SYMBOL
V
RM
VALUE
100
UNIT
V
V
RRM
= V
RWM
= V
R
75
V
Peak forward surge current
t
p
= 1 s
t
p
= 1 μs
I
FSM
I
FSM
1
2
A
A
Average forward current
Half wave rectification with resistive load and
f
50 MHz, on ceramic substrate
8 mm x 10 mm x 0.7 mm
On ceramic substrate
8 mm x 10 mm x 0.7 mm
On ceramic substrate
8 mm x 10 mm x 0.7 mm
I
F(AV)
150
mA
Forward current
I
F
300
mA
Power dissipation
P
tot
350
mW
THERMAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
On ceramic substrate
8 mm x 10 mm x 0.7 mm
SYMBOL
VALUE
UNIT
Junction ambient
R
thJA
357
K/W
Junction and storage temperature range
Operating temperature range
T
j
= T
stg
T
op
- 55 to + 150
- 55 to + 150
°C
°C
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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