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參數(shù)資料
| 型號(hào)： | BAR19 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Small Signal Schottky Diode(小信號(hào)肖特基二極管) |
| 中文描述： | 小信號(hào)肖特基二極管（小信號(hào)肖特基二極管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 61K |
| 代理商： | BAR19 |
BAR 19
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode primarly intended for
UHF mixers and ultrafast switching applications.
November 1994
DO 35
(Glass)
Symbol
V
RRM
I
F
I
FSM
T
stg
T
j
T
L
Parameter
Value
4
30
60
Unit
V
mA
mA
°
C
°
C
°
C
Repetitive Peak Reverse Voltage
Forward Continuous Current*
Surge non Repetitive Forward Current*
Storage and Junction Temperature Range
T
a
= 25
°
C
t
p
≤
1s
- 65 to +150
- 65 to +125
230
Maximum Lead Temperature for Soldering during 10s at 4mm
f rom Case
ABSOLUTE RATINGS
(limiting values)
Symbol
R
th(j-a)
Test Conditions
Value
400
Unit
°
C/W
Junction-ambient*
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
(1) Pulse test: t
≤
300
μ
s
δ
<
2%
.
(2) Noise figure test :
- diode is inserted in a tuned stripline circuit
- local oscillator frequency 1GHz
- local oscillator power 1mW
- intermediate frequency amplifier, tuned on 30MHz, has a noise figure 1.5dB
Symbol
V
BR
V
F
(1)
I
R
(1)
Test Conditions
I
R
= 10
μ
A
I
F
= 10mA
V
R
= 5V
Min.
4
Typ.
Max.
Unit
V
V
μ
A
T
amb
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C
0.6
0.25
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
C
F (2)
Test Conditions
V
R
= 1V
f = 1GHz
Min.
Typ.
Max.
1
Unit
pF
dB
T
amb
= 25
°
C
T
amb
= 25
°
C
f = 1MHz
6
DYNAMIC CHARACTERISTICS
1/3
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