參數(shù)資料
型號(hào)： AS29LV800T-80TI
廠商： ANADIGICS, Inc.
英文描述： 3V 1M】8/512K】16 CMOS Flash EEPROM
中文描述： 3V的100萬(wàn)】8/512K】16個(gè)CMOS閃存EEPROM
文件頁(yè)數(shù)： 3/24頁(yè)
文件大?。?/td> 416K
代理商： AS29LV800T-80TI
AS29LV800
October 2000
DID 11-40002-A. 10/19/00
ALLIANCE SEMICONDUCTOR
3
Operating modes
Mode
L = Low (<V
IL
) = logic 0; H = High (>V
IH
) = logic 1; V
ID
= 10.0 ± 1.0V; X = don’t care.
In ×16 mode, BYTE = V
IH
. In ×8 mode, BYTE = V
IL
with DQ8-DQ14 in high Z and DQ15 = A-1.
Verification of sector protect/unprotect during A9 = V
ID.
Mode definitions
Item
CE
OE
WE
A0
A1
A6
A9
RESET
DQ
ID read MFR code
L
L
H
L
L
L
V
ID
V
ID
A9
H
Code
ID read device code
L
L
H
H
L
L
H
Code
Read
L
L
H
A0
A1
A6
H
D
OUT
High Z
Standby
H
X
X
X
X
X
X
H
Output disable
L
H
H
X
X
X
X
H
High Z
Write
L
H
L
A0
A1
A6
A9
H
D
IN
X
Enable sector protect
L
V
ID
V
ID
Pulse/L
L
H
L
V
ID
V
ID
H
Sector unprotect
L
Pulse/L
L
H
H
H
X
Temporary sector
unprotect
Verify sector protect
Verify sector unprotect
L
X
X
X
X
X
X
X
V
ID
X
L
L
H
L
H
L
V
ID
V
ID
X
H
Code
L
H
L
H
H
H
Code
Hardware Reset
X
X
X
X
X
X
L
High Z
Description
ID MFR code,
device code
Selected by A9 = V
ID
(9.5V–10.5V), CE = OE = A1 = A6 = L, enabling outputs.
When A0 is low (V
IL
) the output data = 52h, a unique Mfr. code for Alliance Semiconductor Flash
products. When A0 is high (V
IH
), D
OUT
represents the device code for the AS29LV800.
Selected with CE = OE = L, WE = H. Data is valid in t
ACC
time after addresses are stable, t
CE
after CE is
low and t
OE
after OE is low.
Selected with CE = H. Part is powered down, and I
CC
reduced to <1.0 μA when CE = V
CC
± 0.3V =
RESET. If activated during an automated on-chip algorithm, the device completes the operation before
entering standby.
Read mode
Standby
Output disable Part remains powered up; but outputs disabled with OE pulled high.
Write
Selected with CE = WE = L, OE = H. Accomplish all Flash erasure and programming through the
command register. Contents of command register serve as inputs to the internal state machine. Address
latching occurs on the falling edge of WE or CE, whichever occurs later. Data latching occurs on the rising
edge WE or CE, whichever occurs first. Filters on WE prevent spurious noise events from appearing as
write commands.
Enable
sector protect
Hardware protection circuitry implemented with external programming equipment causes the device to
disable program and erase operations for specified sectors. For in-system sector protection, refer to Sector
protect algorithm on page14.
Sector
unprotect
Disables sector protection for all sectors using external programming equipment. All sectors must be
protected prior to sector unprotection. For in-system sector unprotection, refer to Sector unprotect
algorithm on page 14.
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