參數(shù)資料
型號(hào): AS29LV800T-80TI
廠商: ANADIGICS, Inc.
英文描述: 3V 1M】8/512K】16 CMOS Flash EEPROM
中文描述: 3V的100萬(wàn)】8/512K】16個(gè)CMOS閃存EEPROM
文件頁(yè)數(shù): 23/24頁(yè)
文件大?。?/td> 416K
代理商: AS29LV800T-80TI
AS29LV800
October 2000
DID 11-40002-A. 10/19/00
ALLIANCE SEMICONDUCTOR
23
Absolute maximum ratings
Parameter
Stresses greater than those listed under
Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specificati on is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
TSOP pin capacitance
Symbol
SO pin capacitance
Symbol
Data retention
Parameter
Symbol
Min
Max
Unit
Input voltage (Input or DQ pin)
V
IN
V
IN
V
CC
T
OPR
T
STG
I
OUT
–0.5
V
CC
+ 0.5
+12.5
V
Input voltage (A9 pin, OE, RESET)
–0.5
V
Power supply voltage
-0.5
+4.0
V
Operating temperature
–55
+125
°C
Storage temperature (plastic)
–65
+150
°C
Short circuit output current
-
150
mA
Parameter
Test setup
Typ
Max
Unit
C
IN
C
OUT
C
IN2
Input capacitance
V
IN
= 0
V
OUT
= 0
V
IN
= 0
6
7.5
pF
Output capacitance
8.5
12
pF
Control pin capacitance
8
10
pF
Parameter
Test setup
Typ
Max
Unit
C
IN
C
OUT
C
IN2
Input capacitance
V
IN
= 0
V
OUT
= 0
V
IN
= 0
6
7.5
pF
Output capacitance
8.5
12
pF
Control pin capacitance
8
10
pF
Temp.(°C)
Min
Unit
Minimum pattern data retention time
150°
10
years
125°
20
years
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