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參數(shù)資料
| 型號： | APTGF50VDA120T3G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 70 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | ROHS COMPLIANT, SP3, 25 PIN |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 243K |
| 代理商： | APTGF50VDA120T3G |
APTGF50VDA120T3G
APTGF50VDA12
0T3G
–
Rev
0
S
eptem
ber,
2009
www.microsemi.com
5- 7
VGE = 15V
25
30
35
40
45
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
td
(on)
,Tu
rn-
O
n
D
e
la
y
T
ime
(n
s)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 5
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
td
(o
ff),
T
u
rn
-O
ff
Del
a
y
Ti
m
e
(n
s
)
VCE = 600V
RG = 5
VGE=15V
20
60
100
140
180
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
tr,
Ri
se
T
im
e
(n
s
)
Current Rise Time vs Collector Current
VCE = 600V
RG = 5
TJ = 25°C
TJ = 125°C
20
30
40
50
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
tf,
F
a
ll
T
im
e
(n
s)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 5
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
4
8
12
16
20
24
28
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
Eon,
Tu
rn-
O
n
Ene
rgy
Lo
ss
(
m
J
)
VCE = 600V
RG = 5
TJ = 25°C
TJ = 125°C
0
2
4
6
8
0
25
50
75
100
125
ICE, Collector to Emitter Current (A)
Eof
f,
Tur
n-
of
fEne
rgy
Lo
ss
(m
J
)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 5
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 25A
0
2
4
6
8
10
12
14
16
18
0
10
20
304050
Gate Resistance (Ohms)
Swi
tch
in
g
Ene
rgy
L
o
ss
es
(
m
J
)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
Eon, 50A
Eoff, 50A
Eon, 25A
Eoff, 25A
0
2
4
6
8
25
50
75
100
125
TJ, Junction Temperature (°C)
Swi
tch
ing
Ene
rgy
Lo
ss
es
(
m
J
)
Switching Energy Losses vs Junction Temp.
VCE = 600V
VGE = 15V
RG = 5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
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| APTGT200DA60T | 290 A, 600 V, N-CHANNEL IGBT |
| APTGT200DA60T | 290 A, 600 V, N-CHANNEL IGBT |
| APTGT300DA120D3G | 440 A, 1200 V, N-CHANNEL IGBT |
| APTGT30X60T3G | 50 A, 600 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF50VDA60T3G | 功能描述:POWER MOD IGBT NPT DL BOOST SP3 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF50X120E2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120E2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF50X120E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF50X120E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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