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參數(shù)資料
| 型號(hào)： | APTGF200U120D |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 275 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-5 |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 290K |
| 代理商： | APTGF200U120D |
APTGF200U120D
A
P
T
G
F
200
U
120D
–
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
5 – 6
VGE = 15V
25
30
35
40
45
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
td
(o
n)
,Tu
rn-
O
n
D
e
la
yTi
m
e(
n
s)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 1.2
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
t
d
(o
ff
),
T
u
rn
-O
ff
D
el
ay
T
im
e
(n
s
)
VCE = 600V
RG = 1.2
VGE=15V
20
60
100
140
180
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
tr
,R
is
e
T
im
e
(n
s)
Current Rise Time vs Collector Current
VCE = 600V
RG = 1.2
TJ = 25°C
TJ = 125°C
20
30
40
50
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
tf
,F
all
T
im
e(
n
s)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 1.2
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
20
40
60
80
100
120
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
E
on,
Turn-
O
n
E
n
e
rgy
L
o
ss
(m
J)
VCE = 600V
RG = 1.2
TJ = 25°C
TJ = 125°C
0
8
16
24
32
0
100
200
300
400
500
ICE, Collector to Emitter Current (A)
E
o
ff
,Turn-
of
fE
n
er
g
yLos
s(
m
J
)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 1.2
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
0
8
16
24
32
40
48
56
64
72
02.5
57.5
10
12.5
Gate Resistance (Ohms)
S
w
it
c
h
in
g
E
n
er
g
yL
o
s
ses
(m
J)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
Eon, 200A
Eoff, 200A
Eon, 100A
Eoff, 100A
0
8
16
24
32
0
25
50
75
100
125
TJ, Junction Temperature (°C)
S
w
it
ch
in
g
E
n
e
rg
y
L
o
ss
es
(
m
J)
Switching Energy Losses vs Junction Temp.
VCE = 600V
VGE = 15V
RG = 1.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF200U120DG | 功能描述:IGBT 1200V 275A 1136W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| APTGF200U120T1G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF200U60D4 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module |
| APTGF20X60BTP2 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module |
| APTGF20X60BTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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