參數(shù)資料
型號(hào)： APTGF200U120D
元件分類： IGBT 晶體管
英文描述： 275 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-5
文件頁數(shù)： 2/6頁
文件大?。?/td> 290K
代理商： APTGF200U120D
APTGF200U120D
A
P
T
G
F
200
U
120D
–
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1.5mA
1200
V
Tj = 25°C
1.5
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 1200V
Tj = 125°C
7.0
mA
Tj = 25°C
3.2
3.7
VCE(on)
Collector Emitter on Voltage
VGE =15V
IC = 200A
Tj = 125°C
4.0
V
VGE(th)
Gate Threshold Voltage
VGE = VCE, IC = 4mA
4.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = ±20V, VCE = 0V
±300
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
13.8
Coes
Output Capacitance
1.32
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
880
nF
Qg
Total gate Charge
1320
Qge
Gate – Emitter Charge
140
Qgc
Gate – Collector Charge
VGS = 15V
VBus = 600V
IC = 200A
800
nC
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
320
Tf
Fall Time
30
Eon
Turn-on Switching Energy
21.6
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 200A
RG = 1.2
9.2
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
65
Td(off)
Turn-off Delay Time
360
Tf
Fall Time
40
ns
Eon
Turn-on Switching Energy
27.9
Eoff
Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 600V
IC = 200A
RG = 1.2
12.2
mJ
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
240
A
IF = 240A
2
2.5
IF = 480A
2.3
VF
Diode Forward Voltage
IF = 240A
Tj = 125°C
1.8
V
Tj = 25°C
400
trr
Reverse Recovery Time
IF = 240A
VR = 800V
di/dt =800A/s
Tj = 125°C
470
ns
Tj = 25°C
4.8
Qrr
Reverse Recovery Charge
IF = 240A
VR = 800V
di/dt =800A/s
Tj = 125°C
16
C
相關(guān)PDF資料
PDF描述
APTGF200U120D 275 A, 1200 V, N-CHANNEL IGBT
APTGF250DA60D3G IGBT
APTGF300DA120 400 A, 1200 V, N-CHANNEL IGBT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
APTGF200U120DG 功能描述:IGBT 1200V 275A 1136W SP6 RoHS:是 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標(biāo)準(zhǔn)包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時(shí)的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時(shí)的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標(biāo)準(zhǔn) NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B
APTGF200U120T1G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
APTGF200U60D4 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Single switch NPT IGBT Power Module
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APTGF20X60BTP2G 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR
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