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參數(shù)資料
| 型號： | APTGF10X60RTP2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 241K |
| 代理商： | APTGF10X60RTP2 |
APTGF10X60RTP2
APTGF10X60BTP2
A
PT
G
F1
0X
60
B
T
P2
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
3 - 4
IGBT & Diode Inverter Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
BVCES
Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 500A
600
V
Tj = 25°C
0.5
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
0.8
mA
Tj = 25°C
1.95
2.35
VCE(on) Collector Emitter on Voltage
VGE =15V
IC = 10A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.6 mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
600
pF
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
220
Tf
Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 10A
RG = 82
18
ns
Td(on)
Turn-on Delay Time
35
Tr
Rise Time
35
Td(off)
Turn-off Delay Time
230
Tf
Fall Time
30
ns
Eoff
Turn off Energy
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 10A
RG = 82
0.3
mJ
Tj = 25°C
1.25
1.7
VF
Forward Voltage
VGE = 0V
IF = 10A
Tj = 125°C
1.2
V
Tj = 25°C
0.85
Qrr
Reverse Recovery Charge
IF = 10A
VR = 300V
di/dt=400A/s
Tj = 125°C
1.35
C
IGBT
1.5
RthJC
Junction to Case
Diode
2.3
°C/W
Temperature sensor NTC
Symbol Characteristic
Min
Typ
Max Unit
R25
Resistance @ 25°C
5
k
B 25/50
T25 = 298.16 K
3375
K
=
T
B
R
T
1
exp
25
50
/
25
3. Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max Unit
VISOL
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
125
°C
Torque Mounting torque
To Heatsink
M5
3.3
N.m
Wt
Package Weight
185
g
T: Thermistor temperature
RT: Thermistor value at T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTGF10X60RTP2 | 20 A, 600 V, N-CHANNEL IGBT |
| APTGF10X60BTP2G | 20 A, 600 V, N-CHANNEL IGBT |
| APTGF10X60BTP2 | 20 A, 600 V, N-CHANNEL IGBT |
| APTGF150A60T3AG | 230 A, 600 V, N-CHANNEL IGBT |
| APTGF15H120T1G | 25 A, 1200 V, N-CHANNEL IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF10X60RTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF125X60E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF125X60E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF125X60TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF125X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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