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參數(shù)資料
| 型號(hào)： | APTGF10X60RTP2 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 20 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-24 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 241K |
| 代理商： | APTGF10X60RTP2 |
APTGF10X60RTP2
APTGF10X60BTP2
A
PT
G
F1
0X
60
B
T
P2
–
R
ev
0
Ju
ly
,2
00
3
APT website – http://www.advancedpower.com
2 - 4
IGBT & Diode Brake (only for APTGF10X60BTP2) Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
20
IC
Continuous Collector Current
TC = 80°C
10
ICM
Pulsed Collector Current
TC = 25°C
25
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
80
W
IF
DC Forward Current
TC = 80°C
10
A
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
20
IC
Continuous Collector Current
TC = 80°C
10
ICM
Pulsed Collector Current
TC = 25°C
25
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
80
W
SCSOA Short circuit Safe Operating Area
Tj = 125°C
45A @ 360V
IF
DC Forward Current
TC = 80°C
10
IFSM
Surge Forward Current
tp = 1ms
TC = 80°C
20
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
IR
Reverse Current
VR = 1600V
Tj = 150°C
2
mA
IF = 30A
Tj = 25°C
1.3
1.5
VF
Forward Voltage
IF = 10A
Tj = 150°C
0.9
0.95
V
RthJC
Junction to Case
1
°C/W
IGBT Brake & Diode (only for APTGF10X60BTP2) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max Unit
Tj = 25°C
0.5
500
A
ICES
Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 125°C
0.8
mA
Tj = 25°C
1.95
2.35
VCE(on) Collector Emitter on Voltage
VGE = 15V
IC = 10A
Tj = 125°C
2.2
V
VGE(th)
Gate Threshold Voltage
VGE = VCE , IC = 0.35mA
4.5
5.5
6.5
V
IGES
Gate – Emitter Leakage Current
VGE = 20V, VCE = 0V
300
nA
Cies
Input Capacitance
VGE = 0V, VCE = 25V
f = 1MHz
600
pF
Tj = 25°C
1.25
1.7
VF
Forward Voltage
VGE = 0V
IF = 10A
Tj = 125°C
1.2
V
IGBT
1.5
RthJC
Junction to Case
Diode
2.3
°C/W
相關(guān)PDF資料 |
PDF描述 |
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| APTGF10X60RTP2 | 20 A, 600 V, N-CHANNEL IGBT |
| APTGF10X60BTP2G | 20 A, 600 V, N-CHANNEL IGBT |
| APTGF10X60BTP2 | 20 A, 600 V, N-CHANNEL IGBT |
| APTGF150A60T3AG | 230 A, 600 V, N-CHANNEL IGBT |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTGF10X60RTP2G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF125X60E3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF125X60E3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APTGF125X60TE3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:3 Phase bridge NPT IGBT Power Module |
| APTGF125X60TE3G | 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
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