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參數(shù)資料
| 型號： | APTC80DDA15T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 335K |
| 代理商： | APTC80DDA15T3 |
APTC80DDA15T3
AP
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C
80
DDA1
5T
3
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ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
10
20
30
40
50
ID, Drain Current (A)
td
(o
n
)a
n
d
td
(o
ff
)
(n
s
)
VDS=533V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
10
20
30
40
50
10
20
30
40
50
ID, Drain Current (A)
t r
a
nd
t f(n
s
)
VDS=533V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
300
600
900
1200
1500
10
20
30
40
50
ID, Drain Current (A)
E
on
a
nd
E
o
ff
(
J
)
VDS=533V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
500
1000
1500
2000
2500
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
J)
Switching Energy vs Gate Resistance
VDS=533V
ID=28A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
6
8 10 12 14 16 18 20 22 24 26
ID, Drain Current (A)
F
req
u
e
n
cy
(
k
H
z)
Operating Frequency vs Drain Current
VDS=533V
D=50%
RG=2.5
TJ=125°C
TC=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2
0.6
1
1.4
1.8
V
SD, Source to Drain Voltage (V)
I DR
,R
eve
rs
eD
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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