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參數(shù)資料
| 型號： | APTC80DDA15T3 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MODULE-25 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 335K |
| 代理商： | APTC80DDA15T3 |
APTC80DDA15T3
AP
T
C
80
DDA1
5T
3
–R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 375A
800
V
VGS = 0V,VDS = 800V
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 800V
Tj = 125°C
375
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 14A
150
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
4507
Coss
Output Capacitance
2092
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
108
pF
Qg
Total gate Charge
180
Qgs
Gate – Source Charge
22
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 400V
ID = 28A
90
nC
Td(on)
Turn-on Delay Time
10
Tr
Rise Time
13
Td(off)
Turn-off Delay Time
83
Tf
Fall Time
Inductive switching @125°C
VGS = 15V
VBus = 533V
ID = 28A
RG = 2.5
35
ns
Eon
Turn-on Switching Energy
486
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
278
J
Eon
Turn-on Switching Energy
850
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 533V
ID = 28A, RG = 2.5
342
J
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1000
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1000V
Tj = 125°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 100°C
60
A
IF = 60A
1.9
2.5
IF = 120A
2.2
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
1.7
V
Tj = 25°C
280
trr
Reverse Recovery Time
Tj = 125°C
350
ns
Tj = 25°C
760
Qrr
Reverse Recovery Charge
IF = 60A
VR = 667V
di/dt=200A/s
Tj = 125°C
3600
nC
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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