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參數(shù)資料
| 型號(hào)： | APTC60HM70SCT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 325K |
| 代理商： | APTC60HM70SCT |
APTC60HM70SCT
A
PT
C
60H
M
70S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
600
V
VGS = 0V,VDS = 600V
Tj = 25°C
25
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
250
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 19.5A
70
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 1mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7015
Coss
Output Capacitance
2565
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
212
pF
Qg
Total gate Charge
259
Qgs
Gate – Source Charge
29
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 39A
111
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 400V
ID = 39A
RG = 5
W
84
ns
Eon
Turn-on Switching Energy
402
Eoff
Turn-off Switching Energy
u
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
980
J
Eon
Turn-on Switching Energy
657
Eoff
Turn-off Switching Energy
u
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 39A, RG = 5
1206
J
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
30
A
IF = 30A
1.1
1.15
IF = 60A
1.4
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
48
ns
Tj = 25°C
33
Qrr
Reverse Recovery Charge
IF = 30A
VR = 133V
di/dt = 200A/s
Tj = 125°C
150
nC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60HM70SCTG | 功能描述:MOSFET 4N CH 600V 39A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60HM70T1G | 功能描述:MOSFET PWR MOD BULL BRIDGE SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60HM70T3 | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Full - Bridge Super Junction MOSFET Power Module |
| APTC60HM70T3G | 功能描述:MOSFET PWR MOD FULL BRIDGE SP3 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60HM83FT2G | 功能描述:MOSFET N CH 600V 36A RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
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