- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄51270 > APTC60SKM24CT1G (MICROSEMI POWER PRODUCTS GROUP) 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號： | APTC60SKM24CT1G |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 251K |
| 代理商： | APTC60SKM24CT1G |
APTC60SKM24CT1G
APT
C
60SKM
24CT
1G
–
Rev
0
August,
200
9
www.microsemi.com
1 – 7
NTC
56
Q1
7
8
12
11
4
3
CR2
12
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
600
V
Tc = 25°C
95
ID
Continuous Drain Current
Tc = 80°C
70
IDM
Pulsed Drain current
260
A
VGS
Gate - Source Voltage
±20
V
RDSon
Drain - Source ON Resistance
24
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
462
W
IAR
Avalanche current (repetitive and non repetitive)
15
A
EAR
Repetitive Avalanche Energy
3
EAS
Single Pulse Avalanche Energy
1900
mJ
Application
AC and DC motor control
Switched Mode Power Supplies
Features
-
Ultra low RDSon
-
Low Miller capacitance
-
Ultra low gate charge
-
Avalanche energy rated
-
Very rugged
CR2 SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
Buck chopper
Super Junction MOSFET
SiC chopper diode
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APTC60SKM24T1G | 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTC60TDUM35P | 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC60TDUM35P | 72 A, 600 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC80A15SCT | 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTC80A15SCT | 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60SKM24T1G | 功能描述:MOSFET N-CH 600V 95A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:CoolMOS™ 標準包裝:10 系列:* |
| APTC60SKM35T1G | 功能描述:MOSFET N-CH 600V 72A SP1 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:* |
| APTC60TAM21SCTPAG | 功能描述:MOSFET 6N-CH 600V 116A SP6-P 制造商:microsemi corporation 系列:CoolMOS?? 包裝:散裝 零件狀態(tài):在售 FET 類型:6 N-溝道（3 相橋） FET 功能:標準 漏源電壓（Vdss）:600V 電流 - 連續(xù)漏極（Id）（25°C 時）:116A 不同?Id，Vgs 時的?Rds On（最大值）:21 毫歐 @ 88A，10V 不同 Id 時的 Vgs（th）（最大值）:3.6V @ 6mA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:580nC @ 10V 不同 Vds 時的輸入電容（Ciss）（最大值）:13000pF @ 100V 功率 - 最大值:625W 工作溫度:-40°C ~ 150°C（TJ） 安裝類型:底座安裝 封裝/外殼:模塊 供應(yīng)商器件封裝:SP6-P 標準包裝:1 |
| APTC60TAM24TPG | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Triple phase leg Super Junction MOSFET Power Module |
| APTC60TAM35P | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Triple phase leg Super Junction MOSFET Power Module |
發(fā)布緊急采購，3分鐘左右您將得到回復。