參數(shù)資料
型號: APTC60DSKM35T3
廠商: MICROSEMI POWER PRODUCTS GROUP
元件分類: JFETs
英文描述: 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: MODULE-25
文件頁數(shù): 6/6頁
文件大小: 338K
代理商: APTC60DSKM35T3
APTC60DSKM35T3
A
P
T
C
60
D
S
K
M
35T
3–
R
ev
0
S
ept
em
be
r,
2004
APT website – http://www.advancedpower.com
6 - 6
TJ=25°C
TJ=150°C
1
10
100
1000
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
350
0
20
40
60
80
100 120
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
0
20406080
100
120
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
20406080
100
120
ID, Drain Current (A)
S
w
it
c
h
in
g
E
n
e
rg
y
(
m
J)
VDS=400V
RG=2.5
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
0
5
10
15
20
25
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=400V
ID=72A
TJ=125°C
L=100H
hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
140
15 20 25 30 35 40 45 50 55 60 65
ID, Drain Current (A)
Fr
e
que
nc
y(
k
H
z)
Operating Frequency vs Drain Current
VDS=400V
D=50%
RG=2.5
TJ=125°C
TC=75°C
“COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相關PDF資料
PDF描述
APTC60HM70SCT 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60HM70SCT 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60HM70T3 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60HM70T3 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTC60SKM24CT1G 95 A, 600 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
APTC60DSKM35T3G 功能描述:MOSFET MOD DUAL BUCK CHOPPER SP3 RoHS:是 類別:半導體模塊 >> FET 系列:- 標準包裝:10 系列:*
APTC60DSKM45CT1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - SIC - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V 49A SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APTC60DSKM45T1G 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk 制造商:Microsemi Corporation 功能描述:MOD MOSFET 600V SP1 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES
APTC60DSKM70CT1G 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR
APTC60DSKM70T1G 制造商:Microsemi Corporation 功能描述:SILICON CARBIDE/SILICON HYBRID MODULES