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參數(shù)資料
| 型號(hào)： | APTC60AM35SCT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 317K |
| 代理商： | APTC60AM35SCT |
APTC60AM35SCT
A
PT
C
60A
M
35S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
4 – 7
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lI
m
pe
da
nc
e
(°
C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
4V
4.5V
5V
5.5V
6V
6.5V
0
40
80
120
160
200
240
280
320
360
400
0
5
10
15
20
25
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VGS=15&10V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
40
80
120
160
200
240
280
012
3456
7
VGS, Gate to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t
(A)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.9
0.95
1
1.05
1.1
0
20
406080
100
120
ID, Drain Current (A)
R
DS
(o
n)
D
rai
n
t
o
So
ur
ce
O
N
R
esi
st
an
ce
Normalized to
VGS=10V @ 36A
0
10
20
30
40
50
60
70
80
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,
DC
Dra
in
Cu
rre
n
t(A)
DC Drain Current vs Case Temperature
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APTC60AM35SCTG | 功能描述:POWER MODULE MOSFET 600V 72A SP4 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM35T1G | 功能描述:MOSFET PWR MOD PHASE LEG SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:- 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM42F2G | 制造商:Microsemi Corporation 功能描述:POWER MODULE - COOLMOS - Bulk |
| APTC60AM45B1G | 功能描述:MOSFET N CH 600V 49A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
| APTC60AM45BC1G | 功能描述:MOSFET N CH 600V 49A SP1 RoHS:是 類別:半導(dǎo)體模塊 >> FET 系列:CoolMOS™ 標(biāo)準(zhǔn)包裝:10 系列:* |
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