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參數(shù)資料
| 型號： | APTC60AM35SCT |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | JFETs |
| 英文描述： | 72 A, 600 V, 0.035 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 317K |
| 代理商： | APTC60AM35SCT |
APTC60AM35SCT
A
PT
C
60A
M
35S
C
T
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
2 – 7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
600
V
VGS = 0V,VDS = 600V
Tj = 25°C
50
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 600V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 36A
35
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2mA
2.1
3
3.9
V
IGSS
Gate – Source Leakage Current
VGS = ±20 V, VDS = 0V
±150
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14
Coss
Output Capacitance
5.13
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
518
Qgs
Gate – Source Charge
58
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 72A
222
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
30
Td(off)
Turn-off Delay Time
283
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 400V
ID = 72A
RG = 2.5
W
84
ns
Eon
Turn-on Switching Energy
804
Eoff
Turn-off Switching Energy
u
Inductive switching @ 25°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
1960
J
Eon
Turn-on Switching Energy
1315
Eoff
Turn-off Switching Energy
u
Inductive switching @ 125°C
VGS = 15V, VBus = 400V
ID = 72A, RG = 2.5
2412
J
u In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
60
A
IF = 60A
1.1
1.15
IF = 120A
1.4
VF
Diode Forward Voltage
IF = 60A
Tj = 125°C
0.9
V
Tj = 25°C
24
trr
Reverse Recovery Time
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
48
ns
Tj = 25°C
66
Qrr
Reverse Recovery Charge
IF = 60A
VR = 133V
di/dt = 400A/s
Tj = 125°C
300
nC
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