- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369365 > APT60M90JN (Advanced Power Technology Ltd.) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS PDF資料下載
參數(shù)資料
| 型號： | APT60M90JN |
| 廠商： | Advanced Power Technology Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| 中文描述： | N溝道增強型高壓功率MOSFET |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 60K |
| 代理商： | APT60M90JN |
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
I
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
T
, CASE TEMPERATURE (
°
C)
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
D
(
-50
-25
0
25
50
T
, JUNCTION TEMPERATURE (
°
C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
T
, CASE TEMPERATURE (
°
C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
I
D
,
I
D
,
I
D
,
(
V
G
(
B
D
(
R
D
(
I
D
,
(
V
0
60
120
180
240
300
0
4
8
12
16
20
0
2
4
6
8
10
0
50
100
150
200
250
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150
75
100 125 150
-50
-25
0
25
50
75
100 125
150
I
D
= 0.5 I
D
[Cont.]
V
GS
= 10V
150
125
100
75
50
25
0
3.0
2.5
2.0
1.5
1.0
0.5
1.2
1.1
1.0
0.9
0.8
0.7
1.4
1.2
1.0
0.8
0.6
0.4
TJ = 25
°
C
250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS
= 10V @ 0.5 I
D
[Cont.]
TJ = -55
°
C
TJ = +25
°
C
APT60M90JN
6V
5.5V
5V
4.5V
4V
6V
5V
4.5V
4V
5.5V
VGS=15V
10V
8V
150
125
100
75
50
25
0
100
80
60
40
20
0
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0.0
TJ = +125
°
C
TJ = -55
°
C
TJ = +25
°
C
TJ = +125
°
C
VD250
μ
SEC. PULSE TEST
@ <0.5 % DUTY CYCLE
VGS=10V
VGS=20V
VGS=8, 10 & 15V
0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| APT8067HVR | Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APTC60DDAM70T3 | Dual boost chopper Super Junction MOSFET Power Module |
| APTDF430U100 | Single diode Power Module |
| APTGF150DH120 | Asymmetrical - Bridge NPT IGBT Power Module |
| APTGF150H120 | Full - Bridge NPT IGBT Power Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT60N60BCS | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT60N60BCSG | 功能描述:MOSFET N-CH 600V 60A TO-247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| APT60N60SCS | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:Super Junction MOSFET |
| APT60N60SCSG | 制造商:Microsemi Corporation 功能描述:Trans MOSFET N-CH 600V 60A 3-Pin(2+Tab) D3PAK 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
| APT60N60SCSG/TR | 制造商:Microsemi Corporation 功能描述: 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 600V 60A D3PAK |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。