參數(shù)資料
型號(hào)： APT60M90JN
廠商： Advanced Power Technology Ltd.
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： N溝道增強(qiáng)型高壓功率MOSFET
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 60K
代理商： APT60M90JN
MIN
TYP
MAX
APT60M90JN
57
APT60M90JN
228
1.8
1600
50
800
26
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
V
GS
= 15V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25
°
C
R
G
= 0.6
MIN
TYP
MAX
11670
1810
545
446
64
208
22
24
65
12
14000
2530
870
670
95
315
45
50
95
25
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current
(Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage
2
(V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
Reverse Recovery Charge (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
μ
s)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
UNIT
Amps
Volts
ns
μ
C
Characteristic / Test Conditions
Internal Drain Inductance
(Measured From Drain Terminal to Center of Die.)
Internal Source Inductance
(Measured From Source Terminals to Source Bond Pads)
RMS Voltage
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Drain-to-Mounting Base Capacitance
(f = 1MHz)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
UNIT
nH
Volts
pF
lbin
PACKAGE CHARACTERISTICS
Symbol
L
D
L
S
V
Isolation
C
Isolation
Torque
MIN
TYP
MAX
3
5
2500
70
13
1
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2
Pulse Test: Pulse width < 380
μ
S, Duty Cycle < 2%
3
See MIL-STD-750 Method 3471
APT60M90JN
0
0.2
0.1
0.05
0.01
0.005
0.001
0.0005
10
-5
10
-4
10
-3
RECTANGULAR PULSE DURATION (SECONDS)
10
-2
10
-1
1.0
10
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Z
θ
J
,
°
C
SINGLE PULSE
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x Z
θ
JC + TC
t1
t2
P
0.01
0.02
0.05
0.1
0.2
D=0.5
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