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參數(shù)資料
| 型號(hào)： | APT1004R2KN |
| 元件分類： | JFETs |
| 英文描述： | 3.5 A, 1000 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | APT1004R2KN |
APT1004RKN
APT1004R2KN
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d
(on)
t
r
t
d
(off)
t
f
805
950
pF
115
160
pF
37
60
pF
35
55
nC
4.3
6.5
nC
18
27
nC
10
20
ns
918
ns
32
48
ns
23
46
ns
DYNAMIC CHARACTERISTICS
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V, I
D
= I
D
[Cont.]
V
DD
= 0.5 V
DSS
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.], V
GS
= 15V
R
G
= 1.8
Test Conditions
TYP
UNIT
MAX
MIN
Symbol Characteristic
APT1004R/1004R2KN
125
Watts
125
Watts
14.4
Amps
14.0
Amps
V
DS
= 0.4 V
DSS
, I
DS
= P
D
/ 0.4 V
DSS
, t = 1 Sec.
I
DS
= I
D
[Cont.],
V
D
S
= P
D
/ I
D
[Cont.], t = 1 Sec.
Safe Operating Area
Inductive Current Clamped
SOA1
SOA2
I
LM
SAFE OPERATING AREA CHARACTERISTICS
Continuous Source Current (Body Diode)
Pulsed Source Current
1
(Body Diode)
Diode Forward Voltage 2 (V
GS
= 0V, I
S
= -I
D
[Cont.])
Reverse Recovery Time (I
S
= -I
D
[Cont.], dl
S
/dt = 100A/
s)
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
APT1004RKN
3.6
Amps
APT1004R2KN
3.5
Amps
APT1004RKN
14.4
Amps
APT1004R2KN
14.0
Amps
1.3
Volts
150
290
580
ns
0.8
1.65
3.3
C
Symbol Characteristic / Test Conditions / Part Number
UNIT
MAX
TYP
MIN
Test Conditions / Part Number
Symbol Characteristic
MIN
TYP
MAX
UNIT
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
2 Pulse Test: Pulse width < 380
S, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Z
θ
JC
,THERMAL
IMPEDANCE
(
°C/W)
1.0
0.5
0.1
0.05
0.01
0.004
Note:
Duty Factor D =
t1/t
2
Peak TJ = PDM x ZθJC + TC
t1
t2
P
DM
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
050-0036
Rev
C
D=0.5
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| APT1004RAN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3.9A I(D) | TO-3 |
| APT1004RBN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RBNR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4.4A I(D) | TO-247AD |
| APT1004RCN | 制造商:ADPOW 制造商全稱:Advanced Power Technology 功能描述:N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| APT1004RDN | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP |
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