參數(shù)資料
型號(hào)： APT11N80GC3
元件分類： JFETs
英文描述： 7.4 A, 800 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
封裝： TO-257AA, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 91K
代理商： APT11N80GC3
TO-257
050-7149
Rev
A
4-2004
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified.
G
D
S
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
mark of Infineon Technologies AG"
Super Junction MOSFET
C
Power Semiconductors
O
O LMOS
Ultra low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Q
g
Avalanche Energy Rated
Hermetic TO-257 Package
APT11N80GC3
800V 7.4A 0.500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
A
nA
Volts
MIN
TYP
MAX
800
0.43
0.50
0.5
20
200
±100
2.1
3
3.9
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 250A)
Drain-Source On-State Resistance 2 (V
GS = 10V, ID = 7.1A)
Zero Gate Voltage Drain Current (V
DS = 800, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 800, VGS = 0V, TJ = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 680A)
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
DS = 640V, ID = 7.4A, TJ = 125°C)
Repetitive Avalanche Current 6
Repetitive Avalanche Energy 6
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
V/ns
Amps
mJ
APT11N80GC3
800
7.4
22.2
±20
±30
77
0.62
-55 to 150
260
50
7.4
0.2
470
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