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參數(shù)資料
| 型號： | AP9980M |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強(qiáng)模式 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 81K |
| 代理商： | AP9980M |
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼
Low Gate Charge
BV
DSS
R
DS(ON)
I
D
80V
52m
Ω
4.6A
▼
Single Drive Requirement
▼
Surface Mount Package
Description
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
A
=25
℃
I
D
@T
A
=100
℃
I
DM
P
D
@T
A
=25
℃
Total Power Dissipation
Linear Derating Factor
Units
V
V
A
A
A
W
W/
℃
T
STG
T
J
℃
℃
Symbol
Value
62.5
Unit
℃
/W
Rthj-a
Thermal Resistance Junction-ambient
3
Max.
Data and specifications subject to change without notice
Thermal Data
Parameter
Storage Temperature Range
Operating Junction Temperature Range
2
-55 to 150
-55 to 150
0.016
Continuous Drain Current
3
, V
GS
@ 10V
Pulsed Drain Current
1
2.9
30
Gate-Source Voltage
Continuous Drain Current
3
, V
GS
@ 10V
4.6
Parameter
Rating
80
Drain-Source Voltage
200107041
AP9980M
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
±20
S1G1
S2
G2
D1
D1D2
D2
SO-8
G2
D2
S2
G1
D1
S1
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