參數(shù)資料
型號(hào)： AP9980J
廠商： ADVANCED POWER ELECTRONICS CORP
英文描述： N-CHANNEL ENHANCEMENT MODE
中文描述： N溝道增強(qiáng)模式
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 83K
代理商： AP9980J
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
80
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.07
-
V/
℃
R
DS(ON)
V
GS
=10V, I
D
=12A
-
-
45
m
Ω
V
GS
=4.5V, I
D
=8A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=12A
V
DS
=80V, V
GS
=0V
V
DS
=64V ,V
GS
=0V
V
GS
=±25V
I
D
=12A
V
DS
=64V
V
GS
=4.5V
V
DS
=40V
I
D
=12A
R
G
=3.3
Ω
,
V
GS
=10V
R
D
=3.3
Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
-
-
55
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
-
10
100
±
100
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
20
-
-
-
18
5
11
11
20
29
30
1810
135
96
1.6
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
30
-
-
-
-
-
-
2900
-
-
-
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
I
S
=20A, V
GS
=0V
I
S
=12A,
V
GS
=0
V
,
dI/dt=100A/μs
Min.
-
-
Typ.
-
57
Max.
1.2
-
Units
V
ns
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
-
140
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9980H/J
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