參數(shù)資料
型號: AP9972GR
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 60 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: ROHS COMPLIANT, TO-262, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 82K
代理商: AP9972GR
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9972GR
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
12
0
20
40
60
Q
G
, Total Gate Charge (nC)
V
G
V
DS
=48V
V
DS
=38V
V
DS
=30V
I
D
=35A
0
20
40
60
80
100
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
I
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
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