參數(shù)資料
型號: AP9972GI
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 35 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, TO-220CFM, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 81K
代理商: AP9972GI
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
AP9972GI
Q
V
G
4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
0
20
Q
G
, Total Gate Charge (nC)
40
60
80
V
G
V
DS
=48V
V
DS
=38V
V
DS
=30V
I
D
=23A
0
20
40
60
80
100
0
2
4
6
8
V
GS
, Gate-to-Source Voltage (V)
I
D
T
j
=150
o
C
T
j
=25
o
C
V
DS
=5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
t
)
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1000
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
I
D
(
T
C
=25
o
C
Single Pulse
100us
1ms
10ms
100ms
DC
100
1000
10000
1
5
9
13
17
21
25
29
V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
相關(guān)PDF資料
PDF描述
AP9972GR N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9973J N-CHANNEL ENHANCEMENT MODE
AP9973H N-CHANNEL ENHANCEMENT MODE
AP9980H N-CHANNEL ENHANCEMENT MODE
AP9980J N-CHANNEL ENHANCEMENT MODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AP9972GI_08 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9972GI-HF 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9972GP 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9972GR 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET
AP9972GR_09 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET