參數(shù)資料
型號: AP9972GI
廠商: ADVANCED POWER ELECTRONICS CORP
元件分類: JFETs
英文描述: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述: 35 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: LEAD FREE, TO-220CFM, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 81K
代理商: AP9972GI
AP9972GI
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
0
30
60
90
120
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
T
C
=150
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
14
16
18
20
2
4
6
8
10
V
GS
, Gate-to-Source Voltage (V)
R
D
)
I
D
=12A
T
C
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=23A
V
G
=10V
0
5
10
15
20
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, Source-to-Drain Voltage (V)
I
S
(
T
j
=25
o
C
T
j
=150
o
C
0.2
0.7
1.2
1.7
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
30
60
90
120
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
I
D
T
C
=25
o
C
10V
7.0V
5.0V
4.5V
V
G
=3.0V
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