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參數(shù)資料
| 型號(hào)： | AP9934GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 35 V, 0.048 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁(yè)數(shù)： | 7/7頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | AP9934GM |
AP9934GM
P-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
t
d(on)
t
r
t
d(off)
t
f
V
DS
90%
V
GS
10%
Q
V
G
-4.5V
Q
GS
Q
GD
Q
G
Charge
0
2
4
6
8
10
12
0
3
6
9
12
Q
G
, Total Gate Charge (nC)
-
G
I
D
=-3A
V
DS
=-28V
10
100
1000
1
5
9
13
17
21
25
29
-V
DS
, Drain-to-Source Voltage (V)
C
f=1.0MHz
C
iss
C
oss
C
rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
N
t
)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
P
DM
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 186
℃
/W
t
T
0.02
0.01
0.1
1
10
100
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-
D
(
100us
1ms
10ms
100ms
1s
DC
T
A
=25
o
C
Single Pulse
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9936GM | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:DC-DC Application, Dual N-channel Device, Surface Mount Package |
| AP9936GM-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:DC-DC Application, Dual N-channel Device, Surface Mount Package |
| AP9936M | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9938AGEY-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Low On-resistance, Surface Mount Package |
| AP9938GEM-HF | 制造商:A-POWER 制造商全稱(chēng):Advanced Power Electronics Corp. 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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