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參數(shù)資料
| 型號(hào)： | AP9934GM |
| 廠商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分類： | JFETs |
| 英文描述： | 2N AND 2P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | 35 V, 0.048 ohm, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, SOP-8 |
| 文件頁數(shù)： | 6/7頁 |
| 文件大?。?/td> | 107K |
| 代理商： | AP9934GM |
P-Channel
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
AP9934GM
0
3
6
9
12
15
18
21
0
1
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-
D
-10V
-7.0V
-5.0V
-4.5V
V
G
=-2.5V
T
A
=25
o
C
0
3
6
9
12
15
18
21
0
1
2
3
4
5
-V
DS
, Drain-to-Source Voltage (V)
-
D
T
A
=150
o
C
V
G
=-2.5V
-10V
-7.0V
-5.0V
-4.5V
60
70
80
90
100
2
4
6
8
10
-V
GS
, Gate-to-Source Voltage (V)
R
D
Ω
)
I
D
=-2A
T
A
=25
o
C
0.6
0.8
1.0
1.2
1.4
1.6
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
D
I
D
=-3A
V
G
=-10V
0
0.5
1
1.5
2
-50
0
50
100
150
T
j
, Junction Temperature (
o
C)
N
G
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1
1.2
-V
SD
, Source-to-Drain Voltage (V)
-
S
(
T
j
=25
o
C
T
j
=150
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AP9936GM | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:DC-DC Application, Dual N-channel Device, Surface Mount Package |
| AP9936GM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:DC-DC Application, Dual N-channel Device, Surface Mount Package |
| AP9936M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP9938AGEY-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:Capable of 2.5V Gate Drive, Low On-resistance, Surface Mount Package |
| AP9938GEM-HF | 制造商:A-POWER 制造商全稱:Advanced Power Electronics Corp. 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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