參數(shù)資料
型號(hào)： AP9926TGO
廠商： ADVANCED POWER ELECTRONICS CORP
英文描述： N-CHANNEL ENHANCEMENT MODE POWER MOSFET
中文描述： N溝道增強(qiáng)型功率MOSFET
文件頁數(shù)： 2/4頁
文件大小： 80K
代理商： AP9926TGO
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=0V, I
D
=250uA
20
-
-
V
Δ
B
V
DSS
/
Δ
T
j
Breakdown Voltage Temperature Coefficient
Reference to 25
℃
, I
D
=1mA
Static Drain-Source On-Resistance
2
-
0.03
-
V/
℃
R
DS(ON)
V
GS
=4.5V, I
D
=4A
-
-
32
m
Ω
V
GS
=2.5V, I
D
=2A
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=6A
V
DS
=20V, V
GS
=0V
V
DS
=16V ,V
GS
=0V
V
GS
=±12V
I
D
=6A
V
DS
=16V
V
GS
=4.5V
V
DS
=10V
I
D
=1A
R
G
=3.3
Ω
,
V
GS
=5V
R
D
=10
Ω
V
GS
=0V
V
DS
=20V
f=1.0MHz
f=1.0MHz
-
-
45
m
Ω
V
GS(th)
g
fs
I
DSS
Gate Threshold Voltage
Forward Transconductance
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-
1
25
±100
15
-
-
-
-
-
-
880
-
-
1.9
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
12
-
-
-
9
2
4
8
10
16
7
550
120
94
1.2
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=70
o
C)
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Ω
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Test Conditions
Min.
-
-
-
Typ.
-
15
8
Max.
1.2
-
-
Units
V
ns
nC
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
I
S
=1.7A, V
GS
=0V
I
S
=6A, V
GS
=0V,
dI/dt=100A/μs
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2
copper pad of
FR4 board ; 208
℃
/W when mounted on Min. copper pad.
AP9926TGO
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