參數(shù)資料
型號: AP603-F
元件分類: 放大器
英文描述: 800 MHz - 2200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝: 6 X 5 MM, ROHS COMPLIANT, MO-229VJGC, SMT, DFN-14
文件頁數(shù): 10/14頁
文件大小: 1200K
代理商: AP603-F
Specifications and information are subject to change without notice
WJ Communications, Inc
Phone 1-800-WJ1-4401 FAX: 408-577-6621 e-mail: sales@wj.com Web site: www.wj.com, www.TriQuint.com
Page 5 of 14 May 2007 ver 1
AP603
High Dynamic Range 7W 28V HBT Amplifier
920-960 MHz Application Circuit (AP603-PCB900)
Typical WCDMA Performance at 25
°C
at a channel power of +30 dBm
Frequency
940 MHz
W-CDMA Channel Power
+30 dBm
Power Gain
17 dB
Input Return Loss
11 dB
Output Return Loss
5.5 dB
ACLR
-52 dBc
IMD3 @ +30 dBm PEP
-52 dBc
Operating Current, Icc
217 mA
Collector Efficiency
16.6 %
Output P1dB
+38.5 dBm
Quiescent Current, Icq
160 mA
Vpd, Vbias
+5 V
Vcc
+28 V
Notes:
1. The primary RF microstrip line is 50
Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C24 is placed at 0.245” (10.0
° @ 940 MHz) from the center of C5.
4. The center of C5 is placed at .060” (2.5
° @ 940 MHz) from the edge of the AP603 (U1).
5. The center of L4 is placed at 0.170” (7.0
° @ 940 MHz) from the edge of the AP603 (U1). L4
is required to be an AVX 0805 type.
6. The center of C25 is placed at 0.480” (19.7
° @ 940 MHz) from the center of L4.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a λ.
8. The main RF trace is cut at component L3 and L4 for this particular reference design.
920-960 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
13
14
15
16
17
18
30
32
34
36
38
40
Output Power (dBm)
Gain
(dB)
920 MHz
940 MHz
960 MHz
S11, S22 vs. Frequency
Vcc = 28V, Icq = 160 mA, 25 C
-25
-20
-15
-10
-5
0
0.8
0.85
0.9
0.95
1
1.05
1.1
Frequency (GHz)
S1
1,
S
2
(
d
B
)
S11
S22
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 160 mA, 25 C
0
10
20
30
40
50
14
18
22
26
30
34
38
Output Power (dBm)
Colle
ctor
Ef
ficien
cy
(%)
920 MHz
940 MHz
960 MHz
ACLR1 vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
-65
-60
-55
-50
-45
-40
22
24
26
28
30
32
Average Output Power (dBm)
A
CLR1
(
dBc)
920 MHz
940 MHz
960 MHz
IMD vs. Output Power
CW 2-tone signal, 940 MHz, f = 1 MHz, 28V, 160 mA Icq, 25 C
-75
-70
-65
-60
-55
-50
26
28
30
32
34
36
Output Power, PEP (dBm)
IMD
(
dBc)
IMD3L
IMD3U
IMD5
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 160 mA, 25 C
0
5
10
15
20
25
22
24
26
28
30
32
Average Output Power (dBm)
Collec
tor
Eff
icienc
y
(%)
920 MHz
940 MHz
960 MHz
5.6pF
See note 3
See note 4
See note 5
See note 6
V
BI
AS
V
PD
GND
V
CC
1.8 Ohm
C7
1000pF
L3
C5
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